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NXP Semiconductors
IP4085/4385/4386/4387/CX4
Integrated high-performance ESD protection diodes
5. Thermal characteristics
Table 4.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
R th(j-a)
thermal resistance from junction
on a 2-layer PCB
[1]
130
K/W
to ambient
[1]
Depends on details of PCB layout.
6. Characteristics
Table 5. Electrical characteristics
T amb = 25 ? C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V BR
breakdown voltage
I R = 15 mA
V CL
clamping voltage
IP4085CX4; IP4386CX4
IP4385CX4
IP4387CX4
I R = 1 A; T amb ? 85 ? C at surge peak
16
7.0
10
-
-
-
-
-
-
V
V
V
pulse, according to IEC 61000-4-5
IP4085CX4
IP4385CX4
IP4386CX4
IP4387CX4
-
-
-
-
-
-
-
-
20
10
20
13
V
V
V
V
I RM
reverse leakage current
IP4085CX4; IP4385CX4
-
-
200
nA
V R = +5 V
C d
V F
diode capacitance
forward voltage
IP4386CX4; V R = +14 V
IP4387CX4; V R = +8 V
V R = 0 V; f = 1 MHz
IP4085CX4
IP4385CX4
IP4386CX4
IP4387CX4
I F = 850 mA
-
-
-
-
-
-
-
-
180
450
160
290
200
800
-
-
-
-
nA
nA
pF
pF
pF
pF
IP4085CX4
IP4385CX4
IP4386CX4
IP4387CX4
[1]
[2]
[1]
[2]
[1]
[2]
[1]
[2]
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.15
1.3
1.0
1.1
1.15
1.3
1.10
1.25
V
V
V
V
V
V
V
V
[1]
[2]
T amb ? +25 ? C
? 30 ? C ? T amb ? +85 ? C
IP4085_4385_4386_4387_CX4
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 14 December 2012
? NXP B.V. 2012. All rights reserved.
4 of 18
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